HOPPING CONDUCTIVITY IN AMORPHOUS ANTIMONY

被引：58

作者：

HAUSER, JJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.9.2623

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2623 / 2626

页数：4

共 16 条

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[6] EVIDENCE FOR MOTT MODEL OF HOPPING CONDUCTION IN ANNEAL STABLE STATE OF AMORPHOUS SILICON
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[7] CORRECTION
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[J]. PHYSICAL REVIEW LETTERS, 1973, 30 (24) : 1238 - 1238
[8] MOGAB CJ, UNPUBLISHED REPORT
[9] LOCALIZED CONDUCTION PROCESSES IN AMORPHOUS GERMANIUM
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WALLEY, PA
[J]. PHILOSOPHICAL MAGAZINE, 1971, 23 (183): : 661 - &
[10] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS
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