DISLOCATION VELOCITIES IN INAS AND GASB

被引：38

作者：

CHOI, SK ^{[1
]}

MIHARA, M ^{[1
]}

NINOMIYA, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1143/JJAP.17.329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：329 / 333

页数：5

共 19 条

[1]

Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[2] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].

CELLI, V ;

THOMSON, R ;

KABLER, M ;

NINOMIYA, T .

PHYSICAL REVIEW, 1963, 131 (01) :58-&

[3] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].

CHAUDHURI, AR ;

PATEL, JR ;

RUBIN, LG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&

[4] IMPURITY EFFECTS ON DISLOCATION VELOCITY IN GALLIUM-ARSENIDE [J].

CHOI, SK ;

MIHARA, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (04) :1154-&

[5] DISLOCATION VELOCITIES IN GAAS [J].

CHOI, SK ;

MIHARA, M ;

NINOMIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745

[6]

DRABBLE JR, 1966, SEMICONDUCT SEMIMET, V2, P75

[7]

Erofeeva S. A., 1973, Soviet Physics - Solid State, V15, P538

[8]

FAUST JW, 1962, COMPOUND SEMICONDUCT, V1, P445

[9]

Friedel J., 1964, DISLOCATIONS

[10] ZUR PLASTISCHEN VERFORMUNG VON GERMANIUM UND INSB [J].

HAASEN, P .

ZEITSCHRIFT FUR PHYSIK, 1962, 167 (04) :461-&

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