SEMICONDUCTOR-TO-METAL AND METAL-TO-METAL TRANSITIONS IN THE 3-DIMENSIONAL MIXED-VALENCE COMPOUND CS2AU2I6 UNDER HIGH-PRESSURES

被引:36
作者
KOJIMA, N
KITAGAWA, H
BAN, T
AMITA, F
NAKAHARA, M
机构
[1] Department of Chemistry, Faculty of Science, Kyoto University, Kyoto
关键词
D O I
10.1016/0038-1098(90)90162-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electrical resistivity of three-dimensional Au mixed-valence compound Cs2Au2I6 was investigated under hydrostatic pressures up to 7.0 GPa and temperatures between room temperature and 480 K, where a semiconductor-to-metal transition (P=4.5 GPa, T=room temperature) and a metal-to-metal transition (P=6.5 GPa, T≈330 K) were observed. The metallic phase appeared at P=6.5 GPa and T{greater-than or approximate} 330 K could be obtained at room temperature and ambient pressure as a metastable phase, whose structure was found to be a cubic perovskite structure from the X-ray diffraction pattern. In connection with these results, the Au valence state of Cs2Au2I6 under high pressures was discussed. © 1990.
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页码:743 / 745
页数:3
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