INFRARED RESPONSE OF PT/SI/ERSI1.7 HETEROSTRUCTURE - TUNABLE INTERNAL PHOTOEMISSION SENSOR

被引：71

作者：

PAHUN, L

CAMPIDELLI, Y

DAVITAYA, FA

BADOZ, PA

机构：

[1] CNET-CNS, BP 98

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 10期

关键词：

D O I：

10.1063/1.107393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the first internal photoemission response of a metal-Si-metal heterostructure. Using the Pt/Si/ErSi1.7 system, we show that the photoresponse of this new device can be strongly modified when a bias of a few hundred mV is applied between the two metallic electrodes: the cutoff wavelength is shifted from 1.4-mu-m to above 5-mu-m, and the quantum efficiency is increased up to 5% at 1.2-mu-m wavelength when a positive bias is applied to the front Pt electrode. These dramatic changes are attributed to a modulation of the effective potential barrier experienced by the photoexcited carriers when crossing the Si film.

引用

页码：1166 / 1168

页数：3

共 17 条

[1]

Ashcroft N.W., 1976, SOLID STATE PHYS

[2]

AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, pCH4

[3]

BADOZ PA, 1990, Patent No. 9003668

[4]

BADOZ PA, 1991, Patent No. 7672553