PHONONS AT NONPLANAR (III-V) SEMICONDUCTOR HETEROJUNCTIONS .2. GASB/INAS (001)

被引：15

作者：

KECHRAKOS, D

INKSON, JC

机构：

[1] Dept. of Phys., Exeter Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the vibrational properties of the GaSb on InAs (001) single interface containing isolated narrow steps. We use a two-parameter valence force model and Green function techniques to obtain the phonon density of states at sites in the step region. Two types of interfaces are studied: with a Ga-As (light interface) or an In-Sb (heavy interface) bond; three types of interface modes have been identified, which serve as a signature of the type of interface. The presence of steps is shown to produce a boundary with mixed light-heavy characteristics. The interface phonons are confined within the step region and their frequency shifts from the planar boundary values due to confinement. Changes in the optical bands are qualitatively analysed by means of the atomic local environment.

引用

页码：155 / 159

页数：5

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