SINGLE-ELECTRON PUMP BASED ON CHARGING EFFECTS

被引：438

作者：

POTHIER, H

LAFARGE, P

URBINA, C

ESTEVE, D

DEVORET, MH

机构：

[1] Service de Physique de l’Etat Condensé, Centre d’Etudes de Saclay, Gif-sur-Yvette

来源：

EUROPHYSICS LETTERS | 1992年 / 17卷 / 03期

关键词：

TUNNELING GENERAL; MEASUREMENT STANDARDS AND CALIBRATION; METAL-INSULATOR-METAL STRUCTURES;

D O I：

10.1209/0295-5075/17/3/011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have designed and operated a device consisting of three nanoscale tunnel junctions biased below the Coulomb gap. Phase shifted r.f. voltages of frequency f applied to two gates <<pump>> one electron per cycle through the device. This is shown experimentally by plateaus in the current-voltage characteristic at I = +/- ef, the sign of the current depending on the relative phase of the r.f. voltages and not on the sign of the bias voltage.

引用

页码：249 / 254

页数：6

共 14 条

[1] COULOMB BLOCKADE OF SINGLE-ELECTRON TUNNELING, AND COHERENT OSCILLATIONS IN SMALL TUNNEL-JUNCTIONS [J].