DRIFT HOLE MOBILITY IN STRAINED AND UNSTRAINED DOPED SI1-XGEX ALLOYS

被引：91

作者：

MANKU, T

MCGREGOR, JM

NATHAN, A

ROULSTON, DJ

NOEL, JP

HOUGHTON, DC

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

[2] UNIV WATERLOO,DEPT ELECT & COMP ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

[3] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.239739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30 percent and doping levels between 10(15)-10(19) cm-3. The mobilities are calculated taking into account the following scattering mechanisms: acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2 x 10(19) cm-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon.

引用

页码：1990 / 1996

页数：7

共 22 条

[1] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE
ARORA, ND
HAUSER, JR
ROULSTON, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295
[2] Busch G., 1960, HELV PHYS ACTA, V33, P437
[3] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[4] HOLE MOBILITY ENHANCEMENT IN MOS-GATED GEXSI1-X/SI HETEROSTRUCTURE INVERSION-LAYERS
GARONE, PM
VENKATARAMAN, V
STURM, JC
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) : 56 - 58
[5] HOLE TRANSPORT-THEORY IN PSEUDOMORPHIC SI1-XGEX ALLOYS GROWN ON SI(001) SUBSTRATES
HINCKLEY, JM
SINGH, J
[J]. PHYSICAL REVIEW B, 1990, 41 (05): : 2912 - 2926
[6] STRUCTURE, PROPERTIES AND APPLICATIONS OF GEXSI1-X STRAINED LAYERS AND SUPERLATTICES
JAIN, SC
HAYES, W
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (07) : 547 - 576
[7] MONTE-CARLO CALCULATION OF STRAINED AND UNSTRAINED ELECTRON MOBILITIES IN SI1-XGEX USING AN IMPROVED IONIZED-IMPURITY MODEL
KAY, LE
TANG, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1483 - 1488
[8] ELECTRICAL PROPERTIES OF GERMANIUM-SILICON ALLOYS
LEVITAS, A
[J]. PHYSICAL REVIEW, 1955, 99 (06): : 1810 - 1814
[9] LYER SS, 1989, IEEE T ELECTRON DEV, V36, P2043
[10] ELECTRON-MOBILITY ENHANCEMENT IN EPITAXIAL MULTILAYER SI-SI1-XGEX ALLOY-FILMS ON (100) SI
MANASEVIT, HM
GERGIS, IS
JONES, AB
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 464 - 466

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