Effect of pressure on the electrical resistivity of CePtGa

被引：11

作者：

Uwatoko, Y. ^{[1
]}

Ishii, T. ^{[1
]}

Oomi, G. ^{[1
]}

Malik, S. K. ^{[2
]}

机构：

[1] Kumamoto Univ, Fac Gen Educ, Dept Phys, Kumamoto 860, Japan

[2] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

PHYSICA B-CONDENSED MATTER | 1995年 / 206卷

关键词：

D O I：

10.1016/0921-4526(94)00407-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical resistivity rho(T) and the magnetoresistance (MR) of CePtGa have been measured under high pressure up to 2 GPa. It is found that the Neel temperature T-N decreases with increasing pressure and disappears above 1 GPa. MR at 4.2 K is negative showing an H-2-dependence. The magnitude of the H-2-coefficient A decreases with increasing pressure having the rate of vertical bar AI vertical bar/dP = -6.4 x 10(-4) T-2 GPa(-1).

引用

页码：199 / 201

页数：3

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