INVESTIGATION OF THE ELECTRONIC EFFECTS OF DISLOCATIONS BY STEM

被引:31
作者
PENNYCOOK, SJ
机构
关键词
D O I
10.1016/0304-3991(81)90027-9
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:99 / 104
页数:6
相关论文
共 32 条
[1]   Radiative Recombination in Germanium with High Dislocation Densities [J].
Barth, W. ;
Bettini, M. ;
Ostertag, U. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03) :K177-K180
[2]  
BATSON PE, 1981, ULTRAMICROSCOPY, V6, P287, DOI 10.1016/S0304-3991(81)80164-7
[3]   SCANNING-TRANSMISSION ELECTRON-MICROSCOPY - MICROANALYSIS FOR THE MICROELECTRONIC AGE [J].
BROWN, LM .
JOURNAL OF PHYSICS F-METAL PHYSICS, 1981, 11 (01) :1-26
[4]  
BROWN LM, 1976, SEM, V2, P353
[5]  
COLLINS AT, 1974, IND DIAMOND REV, V34, P131
[6]   INVESTIGATION OF SEMICONDUCTOR-MATERIALS AND DEVICES BY HIGH-VOLTAGE STEM TECHNIQUES [J].
COSSLETT, VE ;
FATHY, D ;
SPARROW, TG ;
VALDRE, U .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (10) :1177-1184
[7]  
COWLEY JM, 1980, ELECTRON MICROSCOPY, V3, P176
[8]  
CRAVEN AJ, 1980, I PHYS C SER, V52, P343
[9]   CATHODOLUMINESCENCE IN DEFORMED MGO CRYSTALS [J].
DATTA, S ;
BOSWARVA, IM ;
HOLT, DB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (07) :567-571
[10]  
DAVIDSON SM, 1977, J MICROSC-OXFORD, V110, P177, DOI 10.1111/j.1365-2818.1977.tb00032.x