BAND LINEUPS AT THE GASB-ALXGA1-XSB HETERO-JUNCTION - EXPERIMENTAL-EVIDENCE FOR A NEW COMMON ANION RULE

被引：46

作者：

MENENDEZ, J ^{[1
]}

PINCZUK, A ^{[1
]}

WERDER, DJ ^{[1
]}

VALLADARES, JP ^{[1
]}

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 61卷 / 11期

关键词：

SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1016/0038-1098(87)90720-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The valence band offset in GaSb-Al//xGa//1// minus //xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-Al//xGa//1// minus //xAs counterparts. This result suggests the validity of a restricted form of the common anion rule, which can be stated as follows: the valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule is consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.

引用

页码：703 / 706

页数：4

共 27 条

[1]

Abstreiter G., 1984, LIGHT SCATTERING SOL

[2] FREE EXCITON LUMINESCENCE LINESHAPE OF HG0.3CD0.7TE [J].