DIFFERENCES BETWEEN RUBY AND ND-YAG LASER ANNEALING OF ION-IMPLANTED SILICON

被引：8

作者：

TAMMINGA, Y

EGGERMONT, GEJ

HOFKER, WK

HOONHOUT, D

GARRETT, R

SARIS, FW

机构：

[1] FOM,INST ATOM & MOLEC PHYS,AMSTERDAM,NETHERLANDS

[2] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

PHYSICS LETTERS A | 1979年 / 69卷 / 06期

关键词：

D O I：

10.1016/0375-9601(79)90400-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that the threshold power density for laser-induced epitaxial recrystallization of 2100 Å thick amorphous silicon layers, produced by implantation of As, Sb, Sn and Ga ions, depends on the type and dose of dopants when the 1.06 μm radiation of a pulsed scanned Nd:YAG laser is used and that it is independent of these parameters for the 0.69 μm radiation of a single-pulse ruby laser. © 1979.

引用

页码：436 / 438

页数：3

共 6 条

[1] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].