BROAD-AREA HIGH-POWER SEMICONDUCTOR OPTICAL AMPLIFIER

被引：14

作者：

GOLDBERG, L

WELLER, JF

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 13期

关键词：

D O I：

10.1063/1.104307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Operating characteristics of a high-power 400-mu-m-wide, 500-mu-m-long double-pass near-traveling-wave GaAlAs amplifier are described. In pulsed operation, 2.5 W of diffraction-limited emission at 820 nm was obtained with an external power gain of 10 dB and 24% electrical to optical conversion efficiency.

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页码：1357 / 1359

页数：3

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