DIFFERENTIAL PHOTOCURRENT METHOD FOR MEASUREMENT OF THE OPTICAL-ABSORPTION COEFFICIENT AND THE MINORITY-CARRIER DIFFUSION LENGTH IN A SEMICONDUCTOR

被引:16
作者
SUKEGAWA, T
WATANABE, T
MIZUKI, T
TANAKA, A
机构
[1] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN
[2] SHIZUOKA UNIV,GRAD SCH ELECTR SCI & TECHNOL,HAMAMATSU,SHIZUOKA 432,JAPAN
关键词
D O I
10.1109/T-ED.1980.20016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1251 / 1255
页数:5
相关论文
共 25 条
[1]  
BELL RL, 1973, NEGATIVE ELECTRON AF, P26
[2]   VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].
CASEY, HC ;
MILLER, BI ;
PINKAS, E .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287
[3]   CATHODOLUMINESCENT MEASUREMENTS IN GAP (ZN, O) [J].
CASEY, HC ;
JAYSON, JS .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2774-&
[4]   OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J].
CLARK, GD ;
HOLONYAK, N .
PHYSICAL REVIEW, 1967, 156 (03) :913-+
[5]   MINORITY-CARRIER LIFETIMES AND LUMINESCENCE EFFICIENCIES IN NITROGEN-DOPED GAP [J].
DAPKUS, PD ;
HACKETT, WH ;
LORIMOR, OG ;
KAMMLOTT, GW ;
HASZKO, SE .
APPLIED PHYSICS LETTERS, 1973, 22 (05) :227-229
[6]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[7]   RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GAP PHOTOLUMINESCENCE - (DONOR-ACCEPTOR PAIR BANDS - 20 TO 298 DEGREES K - AR LASER EXCITATION - E/T) [J].
GERSHENZON, M ;
MIKULYAKRM .
APPLIED PHYSICS LETTERS, 1966, 8 (10) :245-+
[9]   SCANNING ELECTRON-MICROSCOPE CHARACTERIZATION OF GAP RED-EMITTING DIODES [J].
HACKETT, WH ;
SAUL, RH ;
KAMMLOTT, GW ;
DIXON, RW .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2857-+