1ST-PRINCIPLES CALCULATIONS OF MANY-BODY BAND-GAP NARROWING AT AN AL/GAAS(110) INTERFACE

被引:52
作者
CHARLESWORTH, JPA
GODBY, RW
NEEDS, RJ
机构
[1] Cavendish Labroatory, University of Cambridge, Cambridge CB3 0HE, Madingley Road
关键词
D O I
10.1103/PhysRevLett.70.1685
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We calculate the quasiparticle electronic structure of a Al/GaAs(110) Schottky barrier as a function of distance from the interface, using the GW self-energy operator. The GaAs band gap is significantly narrowed near the metal, although the classical picture of image-potential narrowing is subject to large quantum corrections. The nature of these corrections is explored further using model calculations.
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页码:1685 / 1688
页数:4
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