LOW-RESISTIVITY AND HIGH-MOBILITY TIN-DOPED INDIUM OXIDE-FILMS

被引：49

作者：

RAUF, IA ^{[1
]}

机构：

[1] CANENDISH LAB,MP GRP,CAMBRIDGE,CAMBS,ENGLAND

来源：

MATERIALS LETTERS | 1993年 / 18卷 / 03期

关键词：

Doping (additives) - Electric conductivity - Electron beams - Evaporation - Film preparation - Indium compounds - Oxides - Tin - Transparency;

D O I：

10.1016/0167-577X(93)90110-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin-doped indium oxide films have been prepared by e-beam reactive evaporation using a zone-confining process. The lowest resistivity of 4.4X10-(7) Omega m is lower by a factor of about 4 than previously reported values. Despite such a low resistivity the optical transparency is high (above 70% for film-substrate composite) and the mobility is 0.0103 m(2)V-(1)s-(1) which is comparable to the mobility observed for flux-grown single crystals of indium oxide.

引用

页码：123 / 127

页数：5

共 10 条

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