RAMAN STUDIES OF MOS2 AT HIGH-PRESSURE

被引：80

作者：

BAGNALL, AG ^{[1
]}

LIANG, WY ^{[1
]}

MARSEGLIA, EA ^{[1
]}

WELBER, B ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA B & C | 1980年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/0378-4363(80)90257-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：343 / 346

页数：4

相关论文

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