ON A NONLINEAR INTEGRODIFFERENTIAL DRIFT-DIFFUSION SEMICONDUCTOR MODEL

被引：5

作者：

JIN, LA

机构：

来源：

SIAM JOURNAL ON MATHEMATICAL ANALYSIS | 1994年 / 25卷 / 05期

关键词：

DRIFT-DIFFUSION; SEMICONDUCTOR; NONLINEAR INTEGRODIFFERENTIAL EQUATIONS; INTEGRAL BOUNDARY CONDITION; GLOBAL EXISTENCE; REGULARITY;

D O I：

10.1137/S0036141092238266

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

The author considers a drift-diffusion semiconductor system coming from a model of n-GaAs related to the Gunn effect, which can be transformed into a nonlinear integrodifferential equation with integral boundary condition. The global existence, uniqueness, and regularity of the solution are obtained.

引用

页码：1375 / 1392

页数：18

共 14 条

[1]

Adams RA., 2003, PURE APPL MATH SOB O, V2

[2] GUNN INSTABILITY IN FINITE SAMPLES OF GAAS .1. STATIONARY STATES, STABILITY AND BOUNDARY-CONDITIONS [J].