METHOD FOR THE DETERMINATION OF THE DISTRIBUTION OF THE CONCENTRATION OF INTERFACE STATES OF MOS STRUCTURES

被引：3

作者：

KRAWCZYK, SK

JAKUBOWSKI, A

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(80)90854-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：535 / 539

页数：5

共 7 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[2] CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866
[3] CLAYTON NS, 1968, J SCI INSTRUM, V1, P2
[4] KRAWCZYK SK, UNPUBLISHED
[5] KRAWCZYK SK, 1977, B INF CEMI, V4, P29
[6] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[7] SCOTT CG, 1975, SURFACE PHYSICS PHOS