OPTICAL-ABSORPTION IN CDIN2S4

被引：33

作者：

NAKANISHI, H

ENDO, S

IRIE, T

机构：

[1] SCI UNIV TOKYO, FAC ENGN, DEPT ELECTR ENGN, SHINJUKU, TOKYO, JAPAN

[2] SCI UNIV TOKYO, FAC SCI & TECHNOL, DEPT ELECTR ENGN, NODA, CHIBA, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 10期

关键词：

D O I：

10.1143/JJAP.12.1646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1646 / 1647

页数：2

共 11 条

[1]

ABDULLAEV GB, 1969, SOV PHYS SEMICOND+, V2, P878

[2] OPTICAL AND ELECTRICAL PROPERTIES OF TERNARY CHALCOGENIDES [J].

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LICHTENSTEIGER, M ;

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PHYSICA, 1961, 27 (05) :448-&

[3] PHOTOCONDUCTIVITY IN TERNARY SULFIDES [J].

BEUN, JA ;

NITSCHE, R ;

LICHTENSTEIGER, M .

PHYSICA, 1960, 26 (08) :647-649

[4]

BOLTIVETS NS, 1969, SOV PHYS SEMICOND+, V2, P867

[5] ANISOTROPY OF CONDUCTION BAND IN CDIN2S4 [J].

ENDO, S ;

SUDO, I ;

IRIE, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 29 (02) :519-&

[6] BAND-STRUCTURE OF CDIN2S4 CALCULATED BY PSEUDOPOTENTIAL METHOD [J].

KATSUKI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (06) :1561-1565

[7] THE PHOTOCONDUCTIVITY OF CDIN2S4 ACTIVATED WITH CU OR AU [J].

KOELMANS, H ;

GRIMMEISS, HG .

PHYSICA, 1959, 25 (12) :1287-1288

[8] PSEUDOPOTENTIAL CALCULATION OF BAND STRUCTURE OF CDIN2S4 [J].

MELONI, F ;

MULA, G .

PHYSICAL REVIEW B, 1970, 2 (02) :392-&

[9] BAND STRUCTURE OF SPINEL-TYPE SEMICONDUCTORS [J].

REHWALD, W .

PHYSICAL REVIEW, 1967, 155 (03) :861-&

[10] EFFECT OF EXCESS SULPHUR ON ELECTRICAL AND OPTICAL PROPERTIES OF CDIN2S4 [J].

SUDO, I ;

ENDO, S ;

IRIE, T ;

NAKANISHI, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 31 (03) :949-+

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