EFFECTS OF DISTURBING PULSES ON THE SWITCHABLE POLARIZATION OF PB(ZRTI)O3 THIN-FILM CAPACITORS

被引:22
作者
TAYLOR, DJ
LARSEN, PK
CUPPENS, R
机构
[1] Philips Research Laboratories, Eindhoven
关键词
D O I
10.1063/1.111893
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of disturbing pulses on the switchable polarization in ferroelectric films of PbZrxTi1-xO3 with x = 0.36 and 0.71 has been investigated. The two compositions were selected because of their different hysteresis shapes. Pulse measurements were carried out with a varying number of disturbing pulses at different amplitudes, interrupted by single shot read/write pulses. It was found that the composition with the squarer loop (x=0.36) showed less sensitivity to disturbing pulses, i.e., the switchable polarization did not significantly degrade with 109 disturbing pulses of amplitude 1.2 V. In addition, these results demonstrate that degradation of the stored polarization due to parasitic disturbing voltages in high density ferroelectric random access memories can be kept at an acceptable level.
引用
收藏
页码:1392 / 1394
页数:3
相关论文
共 9 条
  • [1] BURFOOT JC, 1979, POLAR DIELECTRICS TH, P257
  • [2] DEKEIJSERM, 1993, MATER RES SOC S P, V310, P223
  • [3] DORMANS GJM, 1992, MATER RES SOC S P, V243, P203
  • [4] KINGON AI, 1992, FERROELECTRIC THIN F, V2
  • [5] PROCESSING AND ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 (X = 0.2-0.75) FILMS - COMPARISON OF METALLOORGANIC DECOMPOSITION AND SOL-GEL PROCESSES
    KLEE, M
    EUSEMANN, R
    WASER, R
    BRAND, W
    VANHAL, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1566 - 1576
  • [6] FERROELECTRIC MEMORIES
    LARSEN, PK
    CUPPENS, R
    SPIERINGS, GACM
    [J]. FERROELECTRICS, 1992, 128 (1-4) : 265 - 292
  • [7] FERROELECTRICS AND HIGH PERMITTIVITY DIELECTRICS FOR MEMORY APPLICATIONS
    LARSEN, PK
    SPIERINGS, GACM
    CUPPENS, R
    DORMANS, GJM
    [J]. MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 53 - 60
  • [8] ROY RA, 1990, MATER RES SOC SYMP P, V200, P141, DOI 10.1557/PROC-200-141
  • [9] 1992, 3RD P INT S INT FERR, P1