GAAS1-YPY HETEROJUNCTION LASERS

[1] ALFEROV ZI, 1975, SOV TECH PHYS LETT, V1, P147

[2] ALFEROV ZI, 1976, SOV TECH PHYS LETT, V2, P92

[3] ALFEROV ZI, 1975, SOV TECH PHYS LETT, V1, P191

[4] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 327 - 330

[5] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 167 - 169

[6] HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43, LAMBDA-SIMILAR TO 6200 A, 77 DEGREESK) NEAR DIRECT-INDIRECT TRANSITION (Y SIMILAR TO YC APPROXIMATELY EQUAL TO 0.46) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3556 - 3561

[7] YELLOW IN-1-XGA-XP-1-ZAS-Z DOUBLE-HETEROJUNCTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2015 - 2019

[8] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[9] COLEMAN JJ, 1977, 1976 N AM C GAAS REL, P339

[10] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 245 - 247

[1] ALFEROV ZI, 1975, SOV TECH PHYS LETT, V1, P147

[2] ALFEROV ZI, 1976, SOV TECH PHYS LETT, V2, P92

[3] ALFEROV ZI, 1975, SOV TECH PHYS LETT, V1, P191

[4] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J]. APPLIED PHYSICS LETTERS, 1974, 24 (07) : 327 - 330

[5] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 167 - 169

[6] HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43, LAMBDA-SIMILAR TO 6200 A, 77 DEGREESK) NEAR DIRECT-INDIRECT TRANSITION (Y SIMILAR TO YC APPROXIMATELY EQUAL TO 0.46) [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3556 - 3561

[7] YELLOW IN-1-XGA-XP-1-ZAS-Z DOUBLE-HETEROJUNCTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2015 - 2019

[8] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K) [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727

[9] COLEMAN JJ, 1977, 1976 N AM C GAAS REL, P339

[10] LOW-THRESHOLD LPE IN1-X'GAX'P1-Z'ASZ'-IN1-XGAXP1-ZASZ-IN1-X'GAX'P1-Z'ASZ' YELLOW DOUBLE-HETEROJUNCTION LASER-DIODES (J LESS THAN 104 A-CM2, LAMBDA EQUAL TO 5850 A, 77 DEGREESK) [J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 245 - 247