ANNULAR GRAIN STRUCTURES IN PULSED LASER RECRYSTALLIZED SI ON AMORPHOUS INSULATORS

被引：14

作者：

CELLER, GK

LEAMY, HJ

TRIMBLE, LE

SHENG, TT

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：425 / 427

页数：3

共 4 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2]

Celler G. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P435

[3]

Schott J. T., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P479

[4] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

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