ADHESION PROBLEMS IN DEEP-ETCH X-RAY-LITHOGRAPHY CAUSED BY FLUORESCENCE RADIATION FROM THE PLATING BASE

被引：21

作者：

PANTENBURG, FJ

CHLEBEK, J

ELKHOLI, A

HUBER, HL

MOHR, J

OERTEL, HK

SCHULZ, J

机构：

[1] Kernforschungszentrum Karlsruhe, Institut für Mikrostrukturtechnik, 76021 Karlsruhe

[2] Fraunhofer Gesellschaft, Institut für Siliziumtechnologie, 14199 Berlin

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90142-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During the irradiation with synchrotron radiation, electrons and fluorescence photons are created in those regions of the plating base which are underneath the absorbers. This secondary radiation damages the resist at the interface to the plating base and may lead to bad adhesion after development. Experiments at BESSY I (epsilon(c) = 0.6 keV) and ELSA (epsilon(c) = 1.4 and 2.5 keV) and corresponding Monte Carlo simulations are presented for 20 mu m resist layers on a gold plating base.

引用

页码：223 / 226

页数：4