100 MHZ SURFACE ACOUSTOELECTRIC AMPLIFIER EXHIBITING STABLE TERMINAL GAIN WITH DC DRIFT FIELD

被引：27

作者：

CHISHOLM, SH

机构：

[1] Autonetics Division, North American Rockwell Corp., Anaheim, Calif.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 04期

关键词：

D O I：

10.1109/PROC.1969.7064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiments are described for a a surface acousto-electric amplifier utilizing a composite spatially adjacent structure of lithium niobate and a silicon film. Principal observations include 8 dB stable terminal gain at 107 MHz with dc drift field power of 7 W, electronically variable attenuation of 100 dB and net electronic gain up to 1200 MHz. The use of the silicon film as a nonreciprocal Rayleigh wave transducer is also described. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：740 / &

共 5 条

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[5]

1968, MICROWAVES, V7, P21

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