FOXFET BIASSED MICROSTRIP DETECTORS

被引：62

作者：

ALLPORT, PP

CARTER, JR

GIBSON, V

GOODRICK, MJ

HILL, JC

KATVARS, SG

BULLOUGH, MA

GREENWOOD, NM

LUCAS, AD

WILBURN, CD

CARTER, AA

PRITCHARD, TW

NARDINI, L

SELLER, P

THOMAS, SL

机构：

[1] MICRON SEMICOND LTD,LANCING,ENGLAND

[2] UNIV LONDON,QMW,LONDON,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 310卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(91)91016-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A method has been developed for biassing the strips of a silicon microstrip detector with a tunable dynamic resistance. This allows the strip potentials to be tied to a fixed voltage, virtually independent of the strip leakage currents, whilst requiring no processing steps additional to those needed for a standard capacitively coupled detector. Results are presented for full sized detectors (3.3 cm x 6.0 cm) both measured on a probe station and equipped with VLSI readout (MX3) chips. Assemblies are currently undergoing beam tests at CERN with indications of very promising performance.

引用

页码：155 / 159

页数：5

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