HIGH-SPEED (10 GBIT/S) AND LOW-DRIVE-VOLTAGE (1V PEAK TO PEAK) INGAAS/INGAASP MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER WITH SEMIINSULATING BURIED HETEROSTRUCTURE

被引：49

作者：

AOKI, M

SUZUKI, M

TAKAHASHI, M

SANO, H

IDO, T

KAWANO, T

TAKAI, A

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 12期

关键词：

OPTICAL MODULATION; INTEGRATED OPTICS; LASERS;

D O I：

10.1049/el:19920730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An MQW electroabsorption-modulator integrated DFB laser fabricated by using the in-plane bandgap energy control technique and a low-capacitance semi-insulating BH process is presented. This device has a threshold current as low as 5.4 mA and a modulation efficiency as high as 13 dB/2 V. Modulation at 10 Gbit/s with a modulation voltage of only 1 V peak to peak demonstrates the potential value of this device for electroabsorption modulation at 1.55-mu-m.

引用

页码：1157 / 1158

页数：2

共 9 条

[1] NOVEL STRUCTURE MQW ELECTROABSORPTION MODULATOR DFB-LASER INTEGRATED DEVICE FABRICATED BY SELECTIVE AREA MOCVD GROWTH [J].