COMPOSITIONAL INHOMOGENEITIES IN GAAS1-XPX ALLOY EPITAXIAL LAYERS

[1] ARCHER R, PRIVATE COMMUNICATIO

[2] BONSE UK, 1967, ADVANCES XRAY ANALYS, V10, P1

[3] INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1266 - 1269

[4] GOLDSTEIN B, 1962, SOLID STATE ELECTRON, V5, P411

[5] VAPOR PHASE TRANSPORT AND EPITAXIAL GROWTH OF GAAS1-XPX USING WATER VAPOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 192 - &

[6] HOWARD JK, 1965, J ELECTROCHEM SOC, V113, P567

[7] EPITAXIAL GROWTH OF HOMOGENEOUS SOLID SOLUTIONS OF GAAS-GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1295 - 1296

[8] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[9] LOEBNER EE, PRIVATE COMMUNICATIO

[10] LOEBNER EE, 1961, MAR AM CHEM SOC M ST

[1] ARCHER R, PRIVATE COMMUNICATIO

[2] BONSE UK, 1967, ADVANCES XRAY ANALYS, V10, P1

[3] INFLUENCE OF VAPOR COMPOSITION ON THE GROWTH RATE AND MORPHOLOGY OF GALLIUM ARSENIDE EPITAXIAL FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1266 - 1269

[4] GOLDSTEIN B, 1962, SOLID STATE ELECTRON, V5, P411

[5] VAPOR PHASE TRANSPORT AND EPITAXIAL GROWTH OF GAAS1-XPX USING WATER VAPOR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 192 - &

[6] HOWARD JK, 1965, J ELECTROCHEM SOC, V113, P567

[7] EPITAXIAL GROWTH OF HOMOGENEOUS SOLID SOLUTIONS OF GAAS-GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1295 - 1296

[8] THE PREPARATION AND PROPERTIES OF VAPOR-GROWN GAAS-GAP ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 991 - 995

[9] LOEBNER EE, PRIVATE COMMUNICATIO

[10] LOEBNER EE, 1961, MAR AM CHEM SOC M ST