A DESIGN BASIS FOR JUNCTION TRANSISTOR OSCILLATOR CIRCUITS

被引:20
作者
PAGE, DF
机构
来源
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1958年 / 46卷 / 06期
关键词
D O I
10.1109/JRPROC.1958.286956
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1271 / 1280
页数:10
相关论文
共 5 条
[1]  
HYDE FJ, 1958, P I ELECTR ENG, VB105, P221
[2]  
Mason S.J., 1954, IRE T CIRCUIT THEORY, VCT-1, P20, DOI DOI 10.1109/TCT.1954.1083579
[3]  
MIDDLEBROOK RD, 1956, IRE T ELECTRON DEV, V3, P25
[4]  
PAGE DF, 1958, IRE T CIRCUIT THEORY, V5
[5]   STABILITY AND POWER GAIN OF TUNED TRANSISTOR AMPLIFIERS [J].
STERN, AP .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (03) :335-343