LOW COUPLING LOSSES BETWEEN INP/INGAASP OPTICAL AMPLIFIERS AND MONOLITHICALLY INTEGRATED WAVE-GUIDES

被引：18

作者：

BRENNER, T

GINI, E

MELCHIOR, H

机构：

[1] Institute of Quantum Electronics, Swiss Federal Institute of Technology

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 02期

关键词：

D O I：

10.1109/68.196008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We achieved over 90% coupling efficiencies for optical amplifiers integrated with butt-jointed waveguides operating at 1.3 mum. The measurements were performed passively at lambda = 1.53 mum. The optical amplifiers and the waveguides in InP/InGaAsP were grown in two stages with LP-MOVPE. Stop-etch layers and optimized design eased fabrication tolerances.

引用

页码：212 / 214

页数：3

共 9 条

[1] HIGH-EXTINCTION-RATIO MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER FABRICATED BY INPLANE BANDGAP ENERGY CONTROL TECHNIQUE [J].