HYDROGEN PASSIVATION OF A SUBSTITUTIONAL SULFUR DEFECT IN SILICON

被引：20

作者：

YAPSIR, AS

DEAK, P

SINGH, RK

SNYDER, LC

CORBETT, JW

LU, TM

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181

[2] SUNY ALBANY,ALBANY,NY 12222

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9936

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9936 / 9940

页数：5

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