METAL-FILM BARRIERS AGAINST THE EVAPORATION OF VOLATILE COMPONENTS DURING THE HEAT-TREATMENT OF METAL-COMPOUND SEMICONDUCTOR CONTACTS

被引：9

作者：

MOJZES, I ^{[1
]}

VERESEGYHAZY, R ^{[1
]}

KOVACS, B ^{[1
]}

PECZ, B ^{[1
]}

MALINA, V ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST RADIO ENGN & ELECTR, CS-18251 PRAGUE 8, CZECHOSLOVAKIA

来源：

THIN SOLID FILMS | 1988年 / 164卷

关键词：

D O I：

10.1016/0040-6090(88)90100-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1 / 4

页数：4

相关论文

共 6 条

[1] FORMATION, MICROSTRUCTURE AND RESISTANCES OF AU-GE/N-GAAS, AU-GE/N-INP, AU-ZN/P-INP AND AU-BE/P-INP CONTACTS
AUVRAY, P
GUIVARCH, A
LHARIDON, H
MERCIER, JP
HENOC, P
[J]. THIN SOLID FILMS, 1985, 127 (1-2) : 39 - 68
[2] KINETICS OF THE DISSOCIATION OF INP UNDER VACUUM
GALLAGHER, PK
CHU, SNG
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1982, 86 (16) : 3246 - 3250
[3] KIM HB, 1977, I PHYS C SER B, V33, P145
[4] THERMAL-DISSOCIATION OF INP COVERED WITH METALLIC CONTACT LAYERS
MOJZES, I
VERESEGYHAZY, R
MALINA, V
[J]. THIN SOLID FILMS, 1986, 144 (01) : 29 - 40
[5] VOLATILE COMPONENT LOSS AND CONTACT RESISTANCE OF METALS ON GAAS AND GAP DURING ANNEALING
MOJZES, I
SEVESTYEN, T
SZIGETHY, D
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (06) : 449 - &
[6] PALLADIUM ON GAAS - A REACTIVE INTERFACE
OELHAFEN, P
FREEOUF, JL
KUAN, TS
JACKSON, TN
BATSON, PE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 588 - 592