EMITTER CONTROLLED NEGATIVE RESISTANCE IN GAAS

被引：18

作者：

ATALLA, MM

MOLL, JL

机构：

[1] Hewlett-Packard, Palo Alto, CA

[2] Stanford University, Stanford, CA

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 08期

关键词：

D O I：

10.1016/0038-1101(69)90035-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A triode which uses the negative differential mobility of GaAs is proposed for various microwave applications and is analyzed as an oscillator. With proper bias conditions, this device has a microwave equivalent circuit that is simply a capacitance in parallel with a negative resistance. The magnitude of the negative resistance is controlled by injected current. The major characteristics as an oscillator are: 1 < -Q < 10 for nL {reversed tilde equals} 1011 cm-2 and 107 < fL < 108, maximum device efficiency between 15 and 20 per cent, power density approximately 1 10 that of LSA mode device, absence of noise associated with domain formation, and third terminal control of negative resistance. The maximum efficiency as an oscillator is available over a finite range of current density, which decreases as nL increases. © 1969.

引用

页码：619 / &