HIGH CONTRAST RATIO ASYMMETRIC FABRY-PEROT REFLECTION-LIGHT MODULATOR BASED ON GAAS/INGAAS MULTIPLE QUANTUM-WELLS

被引:17
作者
HU, KZ
CHEN, L
MADHUKAR, A
CHEN, P
RAJKUMAR, KC
KAVIANI, K
KARIM, Z
KYRIAKAKIS, C
TANGUAY, AR
机构
[1] UNIV SO CALIF,NATL CTR INTEGRATED PHOTON TECHNOL,LOS ANGELES,CA 90089
[2] UNIV SO CALIF,DEPT MAT SCI,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089
[3] UNIV SO CALIF,DEPT PHYS,PHOTON MAT & DEVICES LAB,LOS ANGELES,CA 90089
[4] UNIV SO CALIF,DEPT ELECT ENGN,OPT MAT & DEVICES LAB,LOS ANGELES,CA 90089
[5] UNIV SO CALIF,DEPT MAT SCI,OPT MAT & DEVICES LAB,LOS ANGELES,CA 90089
关键词
D O I
10.1063/1.106359
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the realization of both high contrast ratio (66:1) and dynamic range (30%) at room temperature in a strained GaAs/InGaAs(100) multiple quantum well based asymmetric Fabry-Perot reflection modulator. The p-i-n configuration modulator also acts as a photodetector and exhibits a high quantum efficiency (approximately 80%).
引用
收藏
页码:1108 / 1110
页数:3
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