CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS

被引：55

作者：

ITO, M ^{[1
]}

KIMURA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

关键词：

D O I：

10.1109/JQE.1980.1070603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：910 / 911

页数：2

共 11 条

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ITO, M
ITO, T
KIMURA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6168 - 6174
[4] OSCILLATION PROPERTIES OF ALGAAS DH LASERS WITH AN EXTERNAL GRATING
ITO, M
KIMURA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (01) : 69 - 77
[5] ITO M, UNPUBLISHED
[6] KOBAYASHI K, 1975, OQE7548 IECE OPT QUA, P47
[7] LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 718 - 726
[8] FILAMENTS AS OPTICAL WAVEGUIDES IN GALLIUM-ARSENIDE LASERS
MATTHEWS, MR
CARLING, WP
DYOTT, RB
[J]. ELECTRONICS LETTERS, 1972, 8 (23) : 570 - &
[9] NOVIKOVA SI, 1961, SOV PHYS-SOL STATE, V3, P129
[10] Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396