H AND D DEPTH PROFILES IN IMPLANTED AND LASER-ANNEALED BERYLLIUM

被引:7
作者
SCHIETTEKATTE, F
KEROACK, D
ROSS, GG
TERREAULT, B
机构
[1] INRS-Énergie et Matériaux, Université du Québec, Varennes, Que. J3X 1S2
关键词
D O I
10.1016/0168-583X(94)95580-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The thermodynamic properties of H and D implanted in Be to different fluences have been investigated by laser flash desorption. From the evolution of the H and D depth profiles following laser annealing, different detrapping/diffusion processes in matter are proposed. The experimental results were compared to those obtained from a finite element time resolved simulation code. Two different processes depending on the H or D fluence can be inferred: at low fluence, a 1.7 eV/molecule detrapping energy and a fairly high effective diffusion coefficient have to be involved, while at high fluence the detrapping energy is less-than-or-equal-to 1 eV/molecule and an extremely rapid migration have to be considered. The transition between these two regimes corresponds approximately to the fluence for which blistering becomes detectable.
引用
收藏
页码:401 / 404
页数:4
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