REACTIVE ION ETCHING OF NIOBIUM

被引：20

作者：

FOXE, TT ^{[1
]}

HUNT, BD ^{[1
]}

ROGERS, C ^{[1
]}

KLEINSASSER, AW ^{[1
]}

BUHRMAN, RA ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1394 / 1397

页数：4

共 10 条

[1]

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[2]

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[3] ETCHING AND FILM FORMATION IN CF3BR PLASMAS - SOME QUALITATIVE OBSERVATIONS AND THEIR GENERAL IMPLICATIONS [J].

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[4] DRY ETCHING OF NB AND FABRICATION OF NB VARIABLE-THICKNESS-BRIDGES [J].

HARADA, T ;

GAMO, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :259-264

[5] HIGH-QUALITY SUB-MICRON NIOBIUM TUNNEL-JUNCTIONS WITH REACTIVE-ION-BEAM OXIDATION [J].

KLEINSASSER, AW ;

BUHRMAN, RA .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :841-843

[6] SUB-MICRON NIOBIUM TUNNEL-JUNCTIONS WITH REACTIVE ION-BEAM OXIDATION [J].

KLEINSASSER, AW ;

HUNT, BD ;

CALLEGARI, AC ;

ROGERS, C ;

TIBERIO, R ;

BUHRMAN, RA .

IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :307-310

[7] SELECTIVE ETCHING OF SI RELATIVE TO SIO2 WITHOUT UNDERCUTTING BY CBRF3 PLASMA [J].

MATSUO, S .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :768-770

[8] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON [J].

MOGAB, CJ ;

LEVINSTEIN, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03) :721-730

[9] REACTIVE ION ETCHING IN THE FABRICATION OF NIOBIUM TUNNEL-JUNCTIONS [J].

REIBLE, SA .

IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :303-306

[10]

SHAIBLE PM, 1980, J VAC SCI TECHNOL, V15, P334

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