PRESSURE-DEPENDENCE OF THE CYCLOTRON MASS IN N-GAAS-GAAIAS HETEROJUNCTIONS BY FIR EMISSION AND TRANSPORT EXPERIMENTS

被引：11

作者：

CHAUBET, C

RAYMOND, A

KNAP, W

MUIOT, JY

BAJ, M

ANDRE, JP

机构：

[1] GES, UM2 Sci. et Tech. de Languedoc, Montpellier

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The pressure dependence of the cyclotron mass of quasi-two-dimensional electrons in GaAs-GaAlAs heterojunctions is studied. We use cyclotron emission experiments coupled with transport experiments. An increase of 0.5% per kbar of the cyclotron mass is found in the investigated pressure range 0-8 kbar. Our analysis shows that two effects, which act in opposite directions, must be considered: the first is the increase of the mass due to the increase of the energy gap and the second is the reduction of the non-parabolicity corrections due to the decrease of the two-dimensional electron gas density when pressure is applied. This explains that the observed increase of the cyclotron mass is smaller than the one predicted by the kp perturbation method.

引用

页码：160 / 164

页数：5

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