PROCESS OF EPITAXIAL-GROWTH OF PBSE ON SNTE (001) STUDIED BY GLANCING ANGLE SCATTERING OF MEV HE IONS

被引：2

作者：

FUJII, Y

FUJIWARA, S

KIMURA, K

MANNAMI, M

机构：

[1] Department of Engineering Science, Kyoto University

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 116卷 / 1-2期

关键词：

EPITAXIAL GROWTH; PBSE/SNTE INTERFACE; SIMULATION OF ION TRAJECTORIES; DISLOCATIONS; MISFIT EDGE DISLOCATIONS;

D O I：

10.1080/10420159108221349

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Process of epitaxial growth of PbSe on SnTe (001) under UHV conditions is studied with the use of glancing angle scattering of MeV He ions and transmission electron microscopy. An empirical relationship of the mean separation of misfit dislocations on the PbSe/SnTe interface and the thickness of the layer is derived from TEM observation. Anomalous broadening of the angular distribution of scattered He ions from the surface of PbSe is observed when the thickness of the PbSe layer is between 1 and about 20 nm. From the simulation of ion trajectories at glancing angle scattering from several model surfaces, this anomaly is attributed to the surface wrinkles caused by a square-net of misfit edge dislocations. © 1991, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：111 / 123

页数：13

共 17 条

[1]

Eshelby J. D., 1979, Dislocations in solids, vol.1. The elastic theory, P167

[2] SURFACE CHANNELING OF MEV HE+ IONS ON A SNTE SINGLE-CRYSTAL [J].