Porous silicon: A novel material for microsystems

被引：55

作者：

Lang, W ^{[1
]}

Steiner, P ^{[1
]}

Sandmaier, H ^{[1
]}

机构：

[1] INST FESTKORPERTECHNOL,D-80686 MUNICH,GERMANY

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 51卷 / 01期

关键词：

porous silicon; microsystems;

D O I：

10.1016/0924-4247(96)80048-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A porous layer is generated by electrochemical dissolution of silicon in HE This new material has some very interesting applications in microstructuring, sensories, microelectronics and microoptics. The etching process and the morphology of porous silicon are described. Possible applications are discussed.

引用

页码：31 / 36

页数：6

共 19 条

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CANHAM L, IN PRESS NATURE

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].