EPITAXIAL-GROWTH OF YBACUO FILMS ON SAPPHIRE AT 500-DEGREES-C BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:22
作者
ODA, S [1 ]
ZAMA, H [1 ]
OHTSUKA, T [1 ]
SUGIYAMA, K [1 ]
HATTORI, T [1 ]
机构
[1] MUSASHI INST TECHNOL,DEPT ELECT & ELECT ENGN,TOKYO 158,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 03期
关键词
D O I
10.1143/JJAP.28.L427
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L427 / L429
页数:3
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