INTER-LANDAU-LEVEL TRANSITIONS OF RESONANTLY TUNNELING ELECTRONS IN TILTED MAGNETIC-FIELDS

被引：34

作者：

LEADBEATER, ML

SHEARD, FW

EAVES, L

机构：

[1] Dept. of Phys., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10期

关键词：

D O I：

10.1088/0268-1242/6/10/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of a tilted magnetic field on the current-voltage characteristics of an n-type double barrier resonant tunnelling device based on GaAs/(AlGa)As is investigated. The component of magnetic field perpendicular to the tunnelling barriers quantizes the electronic states of the quantum well and emitter accumulation layer into discrete Landau levels. The effect of the component parallel to the barriers is to allow tunnelling transitions in which the Landau level index is not conserved. This gives rise to a splitting of the resonant peak in the current-voltage curve into a series of equally spaced sub-peaks. These features are explained using the sequential theory of resonant tunnelling and treating the effect of the transverse component of magnetic field in a perturbation approximation.

引用

页码：1021 / 1024

页数：4

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