SELF-SCATTERING IN MONTE-CARLO CALCULATIONS OF TRANSIENT DYNAMIC-RESPONSE IN SEMICONDUCTORS

被引：5

作者：

FERRY, DK

机构：

来源：

PHYSICS LETTERS A | 1980年 / 78卷 / 04期

关键词：

D O I：

10.1016/0375-9601(80)90399-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：375 / 378

页数：4

共 25 条

[1]

BARKER J, UNPUBLISHED

[2] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].

BOARDMAN, AD ;

FAWCETT, W ;

REES, HD .

SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&

[3] DYNAMICAL RESPONSE OF ELECTRONS IN GAAS AT 300 K [J].

BRAUER, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 81 (01) :147-152

[4]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[5] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].

DAS, P ;

FERRY, DK .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855

[6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[7]

FERRY DK, HDB SEMICONDUCTORS, V1

[8]

FERRY DK, UNPUBLISHED

[9]

Hammersley J. M., 1979, MONTE CARLO METHODS

[10] EFFECT OF IONIZED IMPURITY SCATTERING ON ELECTRON TRANSIT-TIME IN GAAS AND INP FETS [J].

HILL, G ;

ROBSON, PN ;

MAJERFELD, A ;

FAWCETT, W .

ELECTRONICS LETTERS, 1977, 13 (08) :235-236

← 1 2 3 →