DOUBLE POSITIVE BEVELING - BETTER EDGE CONTOUR FOR HIGH-VOLTAGE DEVICES

被引:14
作者
CORNU, J
SCHWEITZER, S
KUHN, O
机构
[1] BROWN BOVERI RES CTR, BADEN, SWITZERLAND
[2] BROWN BOVERI SEMICONDUCTOR DEVEL, BIRR, SWITZERLAND
关键词
D O I
10.1109/T-ED.1974.17893
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:181 / 184
页数:4
相关论文
共 4 条
[1]   FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES [J].
CORNU, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :347-352
[2]  
CORNU J, 1972, ELECTRON LETT, V8
[3]  
OTSUKA M, 1969, 53 I EL ENG C, P32
[4]   MEASUREMENT OF SPATIAL VARIATIONS OF CARRIER LIFETIME IN SILICON POWER DEVICES [J].
ZIMMERMANN, W .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02) :671-+