HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE

The damage production in 6H-SiC has been investigated for Ga and Sb implantation in the temperature region between 80 K and 1473 K. For this purpose a high temperature sample holder has been developed. For implantation temperatures above 573 K amorphization is avoided even at high ion fluences. The decrease of the defect density with the temperature is accompanied by a shift of the distributions towards the depth indicating a change of the nature of the defects. To obtain minimum damage implantation temperatures higher than approximate to 1200 K are necessary. The reduction of the damage concentration at higher temperatures is accompanied by a substitutional incorporation of part of the implanted ions, at 700 K 70% of the implanted Sb atoms are incorporated.