PHOTOCONDUCTIVITY IN INDIUM ANTIMONIDE AT 10.6 MUM WAVELENGTH

被引：14

作者：

GIBSON, AF

KENT, MJ

KIMMITT, MF

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1968年 / 1卷 / 02期

关键词：

D O I：

10.1088/0022-3727/1/2/302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductivity has been observed in indium antimonide at 10·6 μm wavelength using a high-power Q-switched laser as a source, and is ascribed to a two-photon absorption process. Variation in photoconductivity over the temperature range 30-300°K has been studied and comparison with the response at 5·3 μm indicates that the laser radiation substantially reduces the carrier lifetime in indium anti-monide.

引用

页码：149 / &

共 12 条

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