PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF A (GAAS)2/(ALAS)2 SUPERLATTICE

被引：10

作者：

CAI, YQ

RILEY, JD

LECKEY, RCG

USHER, B

FRAXEDAS, J

LEY, L

机构：

[1] TELECOM AUSTRALIA RES LABS, CLAYTON, VIC 3168, AUSTRALIA

[2] EUROPEAN SYNCHROTRON RADIAT FACIL, F-38043 GRENOBLE, FRANCE

[3] UNIV ERLANGEN NURNBERG, INST TECH PHYS, W-8520 ERLANGEN, GERMANY

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.44.3787

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report results from an angle-resolved photoemission study of the electronic structure of the short-period superlattice (GaAs)2/(AlAs)2. These results support the first-principles linear-muffin-tin-orbital-method calculation of Gopalan et al. In particular, a 0.5-eV band pp caused by the reduced periodicity in the [001] growth direction is clearly seen at a binding energy (relative to the valence-band maximum) of 5.3 eV.

引用

页码：3787 / 3792

页数：6

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