SOME ELECTRICAL-PROPERTIES OF AMORPHOUS CD3AS2

Amorphous films of Cd//3As//2 were fabricated by vacuum deposition at pressures less than 10** minus **8 Torr. Conductivity and Hall measurements are reported for the amorphous and crystallized films between 125 and 300 K. Electron mobilities in amorphous films as large as 300 cm**2 V** minus **1 s** minus **1 are observed at room temperature in the higher conductivity samples. Amorphous Cd//3As//2 is a degenerate semiconductor with activation energies between 0. 006 and 0. 012 eV observed in the different samples. Thermoelectric power measurements agree only qualitatively with this model with S varies directly as T**0**. **6.