VACANCY CONTROLLED INTERDIFFUSION OF THE GROUP-V SUBLATTICE IN STRAINED INGAAS/INGAASP QUANTUM-WELLS

被引：23

作者：

GILLIN, WP ^{[1
]}

RAO, SS ^{[1
]}

BRADLEY, IV ^{[1
]}

HOMEWOOD, KP ^{[1
]}

SMITH, AD ^{[1
]}

BRIGGS, ATR ^{[1
]}

机构：

[1] BNR EUROPE LTD, HARLOW CM17 9NA, ESSEX, ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.109911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we present the results of a photoluminescence study of the interdiffusion of arsenic and phosphorous in the In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 system over the temperature range 950-600-degrees-C. We have shown that the diffusion is Fickian with no dependence of the diffusion coefficient on the substrate doping type or etch pit density. For both tin- and sulfur-doped substrates the diffusion can be described by a diffusion coefficient D, which is given by D=D0 exp(-E(A)/kT), where D0=23 cm2/s and E(A)=3.7 eV for temperatures greater than 675-degrees-C. This activation energy is the same as that determined for the group III interdiffusion in In0.2Ga0.8As/GaAs. Below this temperature a lower activation energy process takes over with D0=5 X 10(-10) cm2/s and E(A) = 1.7 eV.

引用

页码：797 / 799

页数：3

共 7 条

[1] THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES [J].

BRADLEY, IV ;

GILLIN, WP ;

HOMEWOOD, KP ;

WEBB, RP .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1686-1692

[2] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[3]

GLEW RW, 1992, FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P234, DOI 10.1109/ICIPRM.1992.235596

[4]

GLEW RW, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P515, DOI 10.1109/ICIPRM.1991.147426

[5] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[6] BAND LINEUPS AND DEFORMATION POTENTIALS IN THE MODEL-SOLID THEORY [J].

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1989, 39 (03) :1871-1883

[7] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :419-422

← 1 →