GAIN, POLARIZATION SENSITIVITY AND SATURATION POWER OF 1.5-MU-M NEAR-TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER

被引:14
作者
SIMON, JC [1 ]
LANDOUSIES, B [1 ]
BOSSIS, Y [1 ]
DOUSSIERE, P [1 ]
FERNIER, B [1 ]
PADIOLEAU, C [1 ]
机构
[1] CO GEN ELECT,F-91460 MARCOUSSIS,FRANCE
关键词
LIGHT - Amplifiers - OPTICAL DEVICES;
D O I
10.1049/el:19870246
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gain, saturation and polarization characteristics of a near-travelling-wave 1. 5 mu m BH semiconductor laser amplifier are reported. An internal cavity peak TE gain of 26. 8 plus or minus 0. 5 db with a gain ripple of 2. 9 plus or minus 0. 1 db, and TE saturation output power of 3. 5 plus or minus 1. 5 db at 22. 2 plus or minus 0. 5 db small-signal gain have been achieved.
引用
收藏
页码:332 / 334
页数:3
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