INSTABILITIES AND TURBULENCE IN SEMICONDUCTORS

被引:8
作者
HANDEL, PH
机构
[1] Institut Max von Laue-Paul Langevin - Außenstelle Garching bei München, Garching
来源
PHYSICA STATUS SOLIDI | 1968年 / 29卷 / 01期
关键词
D O I
10.1002/pssb.19680290131
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A stability calculation shows that a special type of pinch‐like instabilities appears at potential barriers in semiconductors, as well as in ionized gases. These “magnetic barrier instabilities” produce turbulence in the plasma of current carriers. The form and the frequency‐limits of the resulting turbulence or noise‐spectrum permit an explanation of flicker noise. Furthermore the result of a calculation yielding instabilities of the thermal conduction at potential barriers in semiconductors with free terminals is discussed. Like the instabilities of the electric conduction we mentioned, they result from the usual macroscopic‐phenomenological equations, but in contrast to the magnetic ones these “thermal barrier instabilities” appear only in special conditions. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:299 / &
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